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Development of ZnSe‐based white light emitting diodes with longer lifetimes of over 10,000 hr
Author(s) -
Nakamura Takao
Publication year - 2006
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.20285
Subject(s) - cladding (metalworking) , light emitting diode , optoelectronics , diode , materials science , layer (electronics) , semiconductor , white light , electron , luminous flux , optical power , optics , light source , nanotechnology , physics , composite material , laser , quantum mechanics
We have demonstrated ZnSe‐based white light emitting diodes (LEDs) with longer lifetimes of over 10,000 hr at 14.5A/cm 2 by introducing an i‐ZnMgBeSe/p‐ZnMgSe double cladding structure, which includes a very thin i‐ZnMgBeSe layer for suppressing electron overflow and a p‐ZnMgSSe layer for efficient p‐type carrier concentration. By adopting the double cladding layer instead of only the conventional p‐ZnMgSSe cladding layer, rapid degradation is suppressed and the lifetime tendency becomes similar to that of the LEDs consisting of a III‐V semiconductor system. The device simulation and the temperature dependence of optical power showed that the i‐ZnMgBeSe layer played the main role in increasing electron confinement. Our experimental data and reliability test results indicate that the suppression of the electron overflow is essential to achieve a long lifetime acceptable for practical use. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 154(4): 42–48, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20285