Premium
Low‐resistive and transparent AZO films prepared by PLD in magnetic field
Author(s) -
Agura Hideaki,
Okinaka Hirokazu,
Hoki Shigeyasu,
Aoki Takanori,
Suzuki Akio,
Matsushita Tatsuhiko,
Okuda Masahiro
Publication year - 2005
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.20026
Subject(s) - materials science , substrate (aquarium) , pulsed laser deposition , electrical resistivity and conductivity , resistive touchscreen , excimer laser , magnetic field , thin film , deposition (geology) , transmittance , optics , analytical chemistry (journal) , optoelectronics , laser , nanotechnology , chemistry , electrical engineering , paleontology , oceanography , physics , engineering , chromatography , quantum mechanics , sediment , geology , biology
Al 2 O 3 ‐doped ZnO (AZO) thin films have been deposited onto glass substrates using a split target consisting of AZO (1 wt%) and AZO (2 wt%) by pulsed laser deposition with an ArF excimer laser (λ = 193 nm, 15 mJ, 10 Hz, 0.75 J/cm 2 ). By applying a magnetic field perpendicular to the plume, the lowest resistivity of 8.54 × 10 −5 Ω·cm and an average transmittance exceeding 91% over the visible range were obtained at a target‐to‐substrate distance of 25 mm for approximately 279‐nm‐thick AZO film (1.8 wt%) grown at a substrate temperature of 230 °C in vacuum. From cross‐sectional TEM observations and the XRD spectrum, a reason why the low resistivity (54 × 10 −5 Ω·cm) was reproducibly obtained was considered to be due to the fact that a disorder of crystal growth originating in the vicinity of the interface between the substrate and the film was suppressed by application of the magnetic field and the c‐axis orientation took preference, giving rise to the increase of mobility. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 151(2): 40–45, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20026