z-logo
Premium
Problems of the application of N 2 /SF 6 mixtures to gas‐insulated bus
Author(s) -
Inami Kiyoshi,
Maeda Yasuhiro,
Habuchi Yoshitaka,
Yoshimura Manabu,
Hamano Suenobu,
Hama Hiroyuki
Publication year - 2001
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/eej.1100
Subject(s) - materials science , conductor , heat transfer , dielectric strength , dielectric , analytical chemistry (journal) , enclosure , impulse (physics) , sulfur hexafluoride , nuclear engineering , thermodynamics , electrical engineering , mechanics , composite material , chemistry , engineering , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics
In designing a gas‐insulated bus (GIB) using N 2 /SF 6 mixtures, there are many application problems, such as the mixture pressure needed in order to maintain the required dielectric and heat transfer performance. Problems of recycling SF 6 are also essential in applying N 2 /SF 6 mixtures. This paper presents the minimum breakdown field strength at lightning impulse and the temperature rise of the conductor and enclosure as measured for N 2 /SF 6 mixtures. Considering the dielectric and heat transfer properties, we clarify the problems of application of mixtures to a GIB and discuss the appropriate mixture ratio of SF 6 in designing a GIB comparable to the present dimensions. In addition, the lowest limit of SF 6 content in a liquefied recovering method is theoretically estimated for reference in practical SF 6 recovery from mixtures. It is important for design to consider both breakdown phenomena, including the area effect of electrode, and the heat transfer properties of mixtures. © 2001 Scripta Technica, Electr Eng Jpn, 137(4): 25–31, 2001

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom