Open AccessHeavy‐ion induced current in MOS structure
Author(s) -
Takahashi Yoshihiro,
Shibata Toshihiko,
Ohnishi Kazunori,
Hirao Toshio,
Onoda Shinobu,
Kamiya Tomihiro
Publication year - 2007
Publication title -
electronics and communications in japan (part ii: electronics)
Language(s) - English
Resource type - Journals
eISSN - 1520-6432
pISSN - 8756-663X
DOI - 10.1002/ecjb.20274
Subject(s) - irradiation , diode , materials science , ion , argon , oxide , displacement current , current (fluid) , atomic physics , semiconductor , transient (computer programming) , analytical chemistry (journal) , oxygen , optoelectronics , electrical engineering , chemistry , physics , organic chemistry , chromatography , computer science , nuclear physics , metallurgy , engineering , operating system
We studied the mechanism for generation of transient current in MOS structures during heavy‐ion irradiation. In heavy‐ion (argon, oxygen) irradiation tests on Al gate MOS diodes, we observed irradiation‐induced transient current only in bias conditions where the semiconductor surface is in a depletion condition, and found that the peak value was dependent on the applied voltage during irradiation, the oxide film thickness, and the linear energy transfer of heavy ion. In addition, in a comparison of calculation results and test results using a device simulation, we found that a model of the oxide film as a perfectly insulating film can be used to quantitatively explain the test results, and confirmed that the displacement current component of the heavy‐ion induced current in the MOS structure transmitted via the oxide film is dominant. © 2006 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 90(1): 32–40, 2007; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/ecjb.20274