Development of dry‐nano‐polishing technique using reactive ion etching for ultra thin titanium wafer | Zendy

Chino Teruya | Zendy; Watanabe Yuta | Zendy; Tsukiyama Yosuke | Zendy; Sohgawa Masayuki | Zendy; Abe Takashi | Zendy

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Development of dry‐nano‐polishing technique using reactive ion etching for ultra thin titanium wafer

Author(s) -

Chino Teruya,

Watanabe Yuta,

Tsukiyama Yosuke,

Sohgawa Masayuki,

Abe Takashi

Publication year - 2021

Publication title -

electronics and communications in japan

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.131

H-Index - 13

eISSN - 1942-9541

pISSN - 1942-9533

DOI - 10.1002/ecj.12317

Subject(s) - reactive ion etching , wafer , photoresist , materials science , dry etching , titanium , etching (microfabrication) , polishing , photolithography , nano , thin film , metallurgy , composite material , optoelectronics , nanotechnology , layer (electronics)

In this study, we developed a dry‐nano‐polishing technique using reactive ion etching for ultra thin titanium wafer. The surface of titanium coated with photoresist is polished by reactive ion etching using SF6 /C4F8 gas. Etching speed of titanium and photoresist were adjusted to close to each other by changing temperature and ratio of SF6 /C4F8 gas. By etching titanium under these conditions, the smooth surface shape of the resist was transferred to titanium. By combining with photolithography, it is possible to polish a specific part.

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