Premium
Wiring techniques for large size silicon probe using electroplating
Author(s) -
Aono Takanori,
Kanamaru Masatoshi,
Kohno Ryuji,
Hosogane Atsushi
Publication year - 2020
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.12266
Subject(s) - silicon , electroplating , current (fluid) , materials science , current density , optoelectronics , wafer , integrated circuit , electrical engineering , electronic engineering , nanotechnology , engineering , layer (electronics) , physics , quantum mechanics
To realize an uniformization of wiring thickness on a large size silicon probe, a design of wiring to supply current and electroplating conditions were analytically and experimentally evaluated. Circuit simulations adopted with nonlinear resistance elements clarified the distribution of current density on silicon probes. The voltage drop of current supply wiring on the silicon probe was necessary to be decreased to uniformize the thickness of wirings. Thus, the resistance of current supply wiring was decreased, and the bypass wirings were set on the silicon probe for decreasing the current distribution. As a result, the thickness of wirings was uniformized in the thick deviation of less than 1 µm on the silicon probe units. The experiments were qualitatively consistent with the circuit simulations.