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Deposition of uniform carbon film on silicon substrate by chemical solution process
Author(s) -
Hashimoto Yuichi,
Suzumura Tatsuya
Publication year - 2019
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.12206
Subject(s) - silicon , materials science , carbon fibers , substrate (aquarium) , diamond like carbon , work function , carbon film , raman spectroscopy , diamond , electron diffraction , deposition (geology) , analytical chemistry (journal) , chemical engineering , nanotechnology , diffraction , thin film , optoelectronics , composite material , chemistry , optics , composite number , layer (electronics) , organic chemistry , paleontology , oceanography , physics , sediment , biology , geology , engineering
Uniform carbon film was grown on silicon substrate treated by low energy electron at temperature of 60° in the methanol solution. The treatment was carried out to modify the silicon surface by electron irradiation of 50 eV using electron‐beam‐excited plasma. From the results of Raman and X‐ray diffraction spectra, it was confirmed that the film is crystalline carbon containing small amounts of diamond component. The I D /I G ratio and work function of carbon film increased with increasing treatment time of the silicon substrate. The increases of I D /I G ratio and work function suggest that the carbon film had greater concentration of diamond component. On the other hand, the surface roughness and work function of the silicon substrate increased due to an increase of treatment time. The variations of physical and electronic properties are attributed to carbon deposition during the growth process.