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Evaluation of characteristics in VO x microbolometer fabricated by MOD on Si 3 N 4 /SiO 2 membrane
Author(s) -
Maeda Kohei,
Hai Van Nhu,
Nishioka Kunio,
Matsutani Akihiro,
Tachiki Takashi,
Uchida Takashi
Publication year - 2019
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.12150
Subject(s) - microbolometer , materials science , temperature coefficient , substrate (aquarium) , analytical chemistry (journal) , etching (microfabrication) , silicon , chemical vapor deposition , bolometer , nanotechnology , optoelectronics , composite material , chemistry , optics , oceanography , physics , chromatography , layer (electronics) , detector , geology
VO x thin films were fabricated on Si 3 N 4 /SiO 2 /Si substrates by firing precursor films, which were fabricated by metal‐organic decomposition (MOD), with a reduced pressure. Resistance‐temperature (R‐T) characteristics of the films indicating the phase transition from metal to insulator with about 4 orders of resistance change specified with VO 2 (M) were obtained. Furthermore, the films fabricated with a firing temperature of 580‐600°C had temperature coefficient of resistance (TCR) of −2.8 to −2.9 %/K at room temperature. After fabricating VO x microbolometers with 40 × 10 μm 2 using the films on Si 3 N 4 /SiO 2 /Si substrates, Si with a thickness of about 340 μm was etched using Deep‐RIE and XeF 2 vapor etching from the backside of the substrate. Then, the VO x microbolometer was completed on Si 3 N 4 /SiO 2 membrane. The VO x microbolometer on Si 3 N 4 /SiO 2 membrane had a high DC sensitivity of 2310 W −1 , which was about 15 times higher than that of the microbolometer on the Si 3 N 4 /SiO 2 /Si substrate.