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Development of Self‐Heated Stage Suitable for Thermal Assist Reactive Ion Etching of the Functional Metals
Author(s) -
MURATA YUKI,
HAN GANG,
OHKAWA DAIKI,
IMAI JUNICHI,
SOHGAWA MASAYUKI,
ABE TAKASHI
Publication year - 2018
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.12046
Subject(s) - etching (microfabrication) , materials science , reactive ion etching , stage (stratigraphy) , aluminium , thermal , alloy , isotropic etching , composite material , process (computing) , computer science , thermodynamics , layer (electronics) , paleontology , physics , biology , operating system
SUMMARY This paper describes development of self‐heated stage suitable for thermal reactive ion etching (TRIE) of the functional metals. TRIE was evaluated using both experiments and simulations for etching functional metals. The self‐heated stage was designed based on the simulation results. TRIE employs a self‐heated stage which is thermally insulated aluminum plate as the etching stage of a regular RIE apparatus. The stage temperature increases rapidly within 10 min and etch rate does not depend on process time. TRIE technique was used to etch various kinds of functional metals: Ti, Mo, Ta, Nb, and Ti alloy (Ti‐6Al‐4V). It did improve the etching rate of these materials greatly.