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Electrochemical Deposition of Transparent p‐Type Semiconductor NiO
Author(s) -
TONG BAYINGAERDI,
ICHIMURA MASAYA
Publication year - 2018
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.12043
Subject(s) - non blocking i/o , annealing (glass) , materials science , x ray photoelectron spectroscopy , band gap , semiconductor , deposition (geology) , analytical chemistry (journal) , thin film , diffraction , electrochemistry , transmittance , aqueous solution , optics , optoelectronics , chemical engineering , chemistry , metallurgy , nanotechnology , electrode , paleontology , biochemistry , physics , chromatography , sediment , engineering , catalysis , biology
SUMMARY NiO is a p‐type semiconductor having a large band gap (>3 eV). In this study, thin films containing Ni‐O were deposited by the cathodic electrochemical deposition method, and characteristics change by heat treatment was investigated. An aqueous solution containing Ni(NO 3 ) 2 was used as a deposition solution. X‐ray photoelectron spectroscopy showed that the sample before annealing was predominantly Ni(OH) 2 . After heat treatment in air at temperatures higher than 300 °C, the NiO phase was observed by X‐ray diffraction, and the p‐type response was confirmed by the photoelectrochemical measurement. The band gap obtained from the light transmittance measurement was around 3.5 eV.