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Investigation of Maximum Junction Temperature for 4H‐SiC MOSFET During Unclamped Inductive Switching Test
Author(s) -
AN JUNJIE,
NAMAI MASAKI,
OKAMOTO DAI,
YANO HIROSHI,
TADANO HIROSHI,
IWAMURO NORIYUKI
Publication year - 2018
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.12018
Subject(s) - junction temperature , mosfet , materials science , avalanche breakdown , power mosfet , inductance , power (physics) , safe operating area , power semiconductor device , electrical engineering , optoelectronics , voltage , breakdown voltage , engineering , physics , transistor , quantum mechanics
SUMMARY Normally, thermal breakdown is one of the serious failure phenomena in the power device application, which drives the researchers to focus on exploration of the failure mechanism and the new evaluation method for power device. In this paper, unclamped inductive switching test is presented to evaluate energy handing ability and maximum junction temperature of 1200 V/19 A SiC MOSFET during avalanche mode. It is verified that commercial 1200 V/19 A SiC MOSFET can easily withstand almost 10 μs avalanche time and around 924 K maximum junction temperature with 1 mH inductance and 400 V dc bus at the case temperature of 300 K in avalanche mode. In addition, three reasonable evaluation methods of the maximum junction temperature for SiC MOSFET are summarized at different case temperatures.