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Fast and Low Loss Gate Driver for SiC‐MOSFET
Author(s) -
YAMAGUCHI KOJI,
MAGOME JUNICHI,
SASAKI YUJI
Publication year - 2016
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.11866
Subject(s) - gate driver , mosfet , gate equivalent , driver circuit , transistor , electrical engineering , switching time , silicon carbide , logic gate , materials science , gate oxide , electronic engineering , voltage , noise (video) , computer science , engineering , artificial intelligence , image (mathematics) , metallurgy
SUMMARY This paper presents a gate driver with fast switching and low switching loss for silicon carbide‐metal oxide semiconductor field effect transistors. The proposed driver consists of a very simple gate boost circuit and a speed up circuit, and so is cost‐effective. Normally, conventional gate drive methods include a trade‐off between switching losses and noise. The proposed gate driver can reduce switching losses without increasing surge voltage as well as voltage and current fluctuations. The proposed gate driver is able to eliminate the trade‐offs in the switching characteristics.