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Improved Sensitivity and Durability of Poly(3‐Hexylthiophene)‐Based Polymeric Photodetectors Using Indium Tin Oxide Modified by Phosphonic Acid–Based Self‐Assembled Monolayer Treatment
Author(s) -
KAJII HIROTAKE,
SATO YUSUKE,
MORIMUNE TAICHIRO,
OHMORI YUTAKA
Publication year - 2016
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.11828
Subject(s) - materials science , indium tin oxide , monolayer , self assembled monolayer , work function , chemical engineering , organic solar cell , x ray photoelectron spectroscopy , indium , dielectric spectroscopy , layer (electronics) , optoelectronics , electrode , nanotechnology , composite material , chemistry , polymer , electrochemistry , engineering
SUMMARY Organic photodetectors based on poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM) blends with indium tin oxide (ITO) modified by phosphonic acid–based self‐assembled monolayer (SAM) treatment in a short time are investigated. The mixed SAMs serve to tune the surface free energy and the work function of ITO by varying the blend ratio. The phosphonic acid–based SAM treatment results not only in lowering of the injection barrier at the ITO/organic layer interface but also in the lowering of the contact resistance between ITO and the organic layer, as shown by impedance spectroscopy in P3HT hole‐only device with SAMs. P3HT:PCBM device with ITO modified by short treatment time of 1H,1H,2H,2H‐perfluorooctane‐phosphonic acid exhibits an incident‐photon‐to‐current conversion efficiency of above 50% at –2 V, a high on/off ratio, and improved durability.