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Method for Fabricating Multilevel Interconnection Structures Using Differential Delamination Energies between Metal and Silicon Oxide Thin Films
Author(s) -
AONO TAKANORI,
IWASAKI TOMIO,
YOSHIMURA YASUHIRO,
NAKAYAMA YOSHINORI
Publication year - 2016
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.11823
Subject(s) - materials science , silicon , thin film , oxide , composite material , titanium , silicon oxide , interconnection , delamination (geology) , optoelectronics , metallurgy , nanotechnology , computer science , computer network , paleontology , silicon nitride , biology , subduction , tectonics
SUMMARY A method for fabricating multilevel interconnection structures using differential delamination energies (adhesion strength) between metal and silicon oxide thin films has been developed. When the selectivity of the delamination energies between the metal and the silicon oxide thin films sets on the wiring, the silicon oxide thin film can be released on the low delamination energy area and can be held on the high delamination energy area by using ultrasonic waves. The delamination energies are calculated by using a molecular dynamics simulation. The delamination energies between chromium, titanium, and nickel and silicon oxide thin films are larger than those of copper and gold thin films. Chromium, titanium, and nickel are applied as an adhesion layer with silicon oxide, and copper and gold are applied as a release layer from silicon oxide. The results are applied to the process for fabricating the multilevel interconnection structures, and the release and adhesive areas of silicon oxide thin film can be fabricated on the wiring by applying ultrasonic waves. With this method, the lower wiring and the contact areas of multilevel interconnection structures can be easily fabricated.