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Fabrication of Pierce‐Type Nanocrystalline Si Electron‐Emitter Array for Massively Parallel Electron Beam Lithography
Author(s) -
NISHINO HITOSHI,
YOSHIDA SHINYA,
KOJIMA AKIRA,
IKEGAMI NOKATSU,
TANAKA SHUJI,
KOSHIDA NOBUYOSHI,
ESASHI MASAYOSHI
Publication year - 2016
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.11804
Subject(s) - common emitter , materials science , optoelectronics , lithography , electron beam lithography , fabrication , resist , etching (microfabrication) , nanotechnology , medicine , alternative medicine , layer (electronics) , pathology
SUMMARY This paper reports on the development of a fundamental process for a Pierce‐type nanocrystalline Si (nc‐Si) electron emitter array for massively parallel electron beam (EB) lithography based on active‐matrix operation using a large‐scale integrated circuit (LSI). The emitter array consists of 100 × 100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS‐compatible operating voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array with LSI and an extraction electrode plate was also developed based on Au‐In and polymer bonding technologies.