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Development of High Power, Large Area, Deep Ultraviolet Light Emitting Devices Using Dynamic Microplasma Excitation (MIPE) of AlGaN Multiple Quantum Wells
Author(s) -
KUROSE NORIKO,
AOYAGI YOSHINOBU
Publication year - 2016
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.11768
Subject(s) - microplasma , optoelectronics , materials science , ultraviolet , quantum well , gallium nitride , light emitting diode , diode , ultraviolet light , wavelength , photonics , indium gallium nitride , optics , laser , nanotechnology , plasma , physics , layer (electronics) , quantum mechanics
SUMMARY We have succeeded in developing a new dynamic microplasma‐excited deep ultraviolet light emitting device using aluminum gallium nitride (AlGaN) multi‐quantum wells (MIPE). The operating principle is completely different from that of current injection‐type deep ultraviolet light emitting diodes. We have created a 12 × 5.5 cm device with a power of about 1 W at a wavelength of 325 nm. We can achieve panel‐type laminar‐flow water purification and cleaning systems that can be alternatives to the use of mercury lamps as a DUV light source, since these cannot be used under the Minamata Treaty. The wavelength region from 210 nm to 250 nm realized in this device opens new fields of academic research and areas of application, in which the decomposition of materials that are difficult to break down, the synthesis of new materials, including a new H 2 battery cell, and disinfection of water are possible.