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High Sensitivity InAs DQW Linear Hybrid Hall ICs with InAs Deep Quantum Well Hall Elements
Author(s) -
SHIBASAKI ICHIRO,
KURIYAMA KENJI,
MAKINO TAKASHI,
HUKASAWA NAOYA,
SUZUKI KENJI
Publication year - 2015
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.11698
Subject(s) - hall effect , materials science , sensitivity (control systems) , optoelectronics , hall effect sensor , magnetic field , amplifier , condensed matter physics , electrical engineering , electrical resistivity and conductivity , electronic engineering , physics , engineering , magnet , cmos , quantum mechanics
SUMMARY By electrically connecting and placing an InAs deep quantum well (DQW) Hall element as a magnetic sensor chip and an Si IC linear amplifier in a small plastic package, a very small InAs DQW linear hybrid Hall IC (InAs DQW LHHIC) with a high magnetic field sensitivity has been developed. The output voltage of the hybrid Hall IC showed a very small temperature coefficient of 0.02%/°C and the response time was very low, less than 3 μs. By using this InAs DQW LHHIC, practical current sensors with high sensitivity, high accuracy, and temperature stability have been developed.