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Interface State Density Evaluation of p‐Type and n‐Type Ge/GeN x Structures by Conductance Technique
Author(s) -
IWASAKI TAKURO,
ONO TOSHIRO,
OTANI YOHEI,
FUKUDA YUKIO,
OKAMOTO HIROSHI
Publication year - 2015
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.11655
Subject(s) - conductance , germanium , interface (matter) , materials science , electron density , electron cyclotron resonance , electron , condensed matter physics , optoelectronics , silicon , physics , capillary number , quantum mechanics , capillary action , composite material
SUMMARY Ge‐MIS structures have attracted attention as next‐generation CMOS devices. We have reported that a GeN x /Ge structure with a low interface state density can be made by the electron cyclotron resonance (ECR) plasma technique, and that the interface state density of Ge‐MIS structures can be evaluated through characteristic analysis in the inversion region even at room temperature. In this report, we evaluate the interface state density of p‐type and n‐type GeN x /Ge structures using the conductance technique at low temperature and characteristic analysis at room temperature, and the related process dependences. We have successfully evaluated the interface characteristics of GeN x /Ge structures. The interface state density was systematically distributed with respect to the midgap, and the density near the midgap was close to that of the GeO 2 /Ge structure.