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Low‐Voltage PTAT Voltage Reference with Area Efficiency Improved
Author(s) -
Wada Kazuyuki,
Ito Ryo,
Sekine Kawori
Publication year - 2014
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.11607
Subject(s) - voltage reference , voltage , subthreshold conduction , mosfet , materials science , electrical engineering , physics , transistor , engineering
SUMMARY The structure of a proportional‐to‐absolute‐temperature (PTAT) voltage reference with MOSFETs operating in the subthreshold region is proposed. It is based on the conventional structure, operation equivalent to which is achieved from the viewpoint of relations between the voltages and currents of MOSFETs. The derived structure relaxes the occupied area. Experimental results of a PTAT voltage reference implemented on a chip as an example are presented.