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Improvements in pulsed current sharing in driving parallel MOSFETs
Author(s) -
Takagi Hajime,
Orihara Masato,
Yamada Tsutomu,
Yanagidaira Takeshi
Publication year - 2013
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.11471
Subject(s) - transistor , series and parallel circuits , electrical engineering , materials science , mosfet , optoelectronics , current (fluid) , inductance , equivalent series resistance , voltage , electronic engineering , engineering
To switch high‐voltage and high‐current pulses by using MOS (Metal Oxide Semiconductor) transistors, it is necessary to distribute evenly the voltage and current to all elements connected in series and parallel. In parallel connection, the current flowing in each element is different depending on the series resistance and wiring inductance. We verified improvements in pulsed current sharing in parallel transistors which were arranged in line on a printed circuit board. Although the gate and drain wirings were different in length, the pulsed current was evenly distributed by using transmission line transformers. The dissipation in transistors was equalized and four transistors were driven simultaneously near the rated current. © 2013 Wiley Periodicals, Inc. Electron Comm Jpn, 96(3): 1–8, 2013; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/ecj.11471.