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Characteristics of Silicon Films Deposited by Atmospheric‐Pressure Plasma‐Enhanced Chemical Transport
Author(s) -
Naito Teruki,
Yokoyama Yoshinori,
Konno Nobuaki,
Tokunaga Takashi,
Itoh Toshihiro
Publication year - 2013
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.11467
Subject(s) - torr , silicon , polycrystalline silicon , materials science , atmospheric pressure , plasma , optoelectronics , atmospheric pressure plasma , crystallite , analytical chemistry (journal) , nanotechnology , chemistry , thin film transistor , metallurgy , meteorology , physics , environmental chemistry , layer (electronics) , quantum mechanics , thermodynamics
SUMMARY The characteristics of silicon films deposited at 700 Torr by plasma‐enhanced chemical transport were investigated. The Si films were polycrystalline and the Hall mobility was 1.9 cm 2 /Vs. These results indicate that our Si films are comparable with polycrystalline Si deposited by conventional plasma‐enhanced CVD . We fabricated a strain gauge sensor using our silicon film. The output voltage showed a good linearity to the pressure. © 2013 Wiley Periodicals, Inc. Electron Comm Jpn, 96(8): 26–31, 2013; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/ecj.11467