Characteristics of Silicon Films Deposited by Atmospheric‐Pressure Plasma‐Enhanced Chemical Transport | Zendy

Naito Teruki | Zendy; Yokoyama Yoshinori | Zendy; Konno Nobuaki | Zendy; Tokunaga Takashi | Zendy; Itoh Toshihiro | Zendy

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Characteristics of Silicon Films Deposited by Atmospheric‐Pressure Plasma‐Enhanced Chemical Transport

Author(s) -

Naito Teruki,

Yokoyama Yoshinori,

Konno Nobuaki,

Tokunaga Takashi,

Itoh Toshihiro

Publication year - 2013

Publication title -

electronics and communications in japan

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.131

H-Index - 13

eISSN - 1942-9541

pISSN - 1942-9533

DOI - 10.1002/ecj.11467

Subject(s) - torr , silicon , polycrystalline silicon , materials science , atmospheric pressure , plasma , optoelectronics , atmospheric pressure plasma , crystallite , analytical chemistry (journal) , nanotechnology , chemistry , thin film transistor , metallurgy , meteorology , physics , environmental chemistry , layer (electronics) , quantum mechanics , thermodynamics

SUMMARY The characteristics of silicon films deposited at 700 Torr by plasma‐enhanced chemical transport were investigated. The Si films were polycrystalline and the Hall mobility was 1.9 cm 2 /Vs. These results indicate that our Si films are comparable with polycrystalline Si deposited by conventional plasma‐enhanced CVD . We fabricated a strain gauge sensor using our silicon film. The output voltage showed a good linearity to the pressure. © 2013 Wiley Periodicals, Inc. Electron Comm Jpn, 96(8): 26–31, 2013; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/ecj.11467

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