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Measurement of photoacoustic signals of depletion layer in planar metal–semiconductor–metal structure
Author(s) -
Murakami Masahiko,
Takabatake Nobuya,
Sato Kazunori,
Arai Toshihiko
Publication year - 2013
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.10402
Subject(s) - depletion region , signal (programming language) , semiconductor , materials science , planar , schottky barrier , layer (electronics) , optoelectronics , optics , photoacoustic effect , photoelectric effect , phase (matter) , metal , photoacoustic imaging in biomedicine , chemistry , nanotechnology , diode , physics , computer graphics (images) , organic chemistry , computer science , metallurgy , programming language
The photoacoustic signal from the depletion layer formed within a planar metal–semiconductor–metal (MSM) structure was detected using the photoacoustic method. To measure the distribution of the photoacoustic signal from the depletion layer, the surface of the sample was illuminated and scanned by an intensity‐modulated optical beam. The amplitude and phase shifts of the observed signal increased with an increase in the reverse bias in the Schottky barrier. The intensity distribution of the photoacoustic signal corresponded closely to the position of the photocurrent distribution, showing the presence of the depletion layer as measured by the photoelectric method. This demonstrates clearly that the photoacoustic signal reects the presence of the depletion layer in semiconductor materials, and that the photoacoustic method can be used eectively for the visualization of the depletion layer. © 2013 Wiley Periodicals, Inc. Electron Comm Jpn, 96(2): 65–70, 2013; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/ecj.10402