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InP‐based InGaAsSbN quantum well laser diodes in the 2‐μm wavelength region
Author(s) -
Kawamura Yuichi
Publication year - 2011
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.10195
Subject(s) - diode , laser , optoelectronics , molecular beam epitaxy , quantum well , electroluminescence , materials science , wavelength , quantum well laser , annealing (glass) , semiconductor laser theory , laser diode , epitaxy , optics , quantum dot laser , physics , nanotechnology , layer (electronics) , composite material
InGaAsSbN quantum well (QW) laser diodes on InP in the 2‐μm wavelength region were grown by molecular beam epitaxy (MBE). It was found that an increase in Sb content improved the properties of InGaAsSbN QW laser diodes. We observed electroluminescence at 4.51 μm at room temperature for InAsSbN SQ laser diodes, and laser operation at 2.31 μm at 190 K. Annealing effects were also studied. © 2011 Wiley Periodicals, Inc. Electron Comm Jpn, 94(5): 33–38, 2011; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/ecj.10195