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Fabrication and evaluation of complementary logic circuits using zinc oxide and pentacene thin film transistor
Author(s) -
Iechi Hiroyuki,
Watanabe Yasuyuki,
Yamauchi Hiroshi,
Kudo Kazuhiro
Publication year - 2009
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.10085
Subject(s) - pentacene , materials science , transistor , thin film transistor , optoelectronics , fabrication , field effect transistor , electrode , thin film , cutoff frequency , inverter , electron mobility , voltage , nanotechnology , electrical engineering , chemistry , engineering , layer (electronics) , medicine , alternative medicine , pathology
Abstract We fabricated hybrid complementary inverters with n‐channel zinc oxide (ZnO) transistors as the n‐type inorganic material and p‐channel organic transistors using pentacene as the p‐type organic material. The complementary inverter exhibited a large voltage gain of 10 to 12 and a cutoff frequency of 0.5 kHz. ZnO thin film transistors show n‐type semiconducting properties having field‐effect mobility of 2.1×10 −3 cm 2 /Vs. On the other hand, pentacene thin film transistors show p‐type semiconducting properties having field‐effect mobility of 3.2×10 −2 cm 2 /Vs. We describe basic charge transfer characteristics of ZnO thin films. The results obtained here demonstrate that it is important for the transistor using ZnO to be injected charge from electrode to semiconducting material effectively. © 2009 Wiley Periodicals, Inc. Electron Comm Jpn, 92(9): 36–42, 2009; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/ecj.10085