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Selective X‐ray analysis of electron localizing sites using capacitance or electrostatic force
Author(s) -
Ishii Masashi
Publication year - 2009
Publication title -
electronics and communications in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.131
H-Index - 13
eISSN - 1942-9541
pISSN - 1942-9533
DOI - 10.1002/ecj.10016
Subject(s) - photoionization , electron , materials science , capacitance , nanostructure , ionization , wafer , atomic physics , x ray photoelectron spectroscopy , photon energy , analytical chemistry (journal) , optoelectronics , photon , molecular physics , nanotechnology , chemistry , electrode , physics , optics , ion , nuclear magnetic resonance , organic chemistry , quantum mechanics , chromatography
For selective analyses of nanostructures, an X‐ray analysis in which X‐ray‐induced photoionization of electron localizing sites is probed with capacitance (C) or electrostatic force (EF) is proposed. The photoionization of nanostructures with localized electrons provides a quasi‐stable state with a long lifetime of 1 ms or longer. The photoionization is rapidly relaxed to initial state within several femtoseconds at the other sites without localized electrons. Because of high sensitivity of C and EF to the quasi‐stable state with long lifetime, selective analyses of nanostructure can be achieved. We demonstrate this technique with samples of Cu metal and chemically deposited Si oxide film. We observe the modulation of C and EF with a parallel‐plate capacitor and electrostatic force micro‐scopy. The C modulation dependent on X‐ray photon energy indicated an electronic state of Cu/Cu 2 O interface, and the EF modulation realized stoichiometry mapping of thin SiO x film on Si wafer. © 2009 Wiley Periodicals, Inc. Electron Comm Jpn, 92(3): 38–45, 2009; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/ecj.10016