Open AccessPalladium thin films grown by CVD from (1,1,1,5,5,5‐hexafluoro‐2,4‐pentanedionato) palladium( II )
Author(s) -
Bhaskaran Vijay,
HampdenSmith Mark J.,
Kodas Toivo T.
Publication year - 1997
Publication title -
chemical vapor deposition
Language(s) - English
Resource type - Journals
eISSN - 1521-3862
pISSN - 0948-1907
DOI - 10.1002/cvde.19970030506
Subject(s) - palladium , auger electron spectroscopy , substrate (aquarium) , deposition (geology) , analytical chemistry (journal) , crystallite , chemistry , thin film , materials science , catalysis , nanotechnology , crystallography , organic chemistry , paleontology , physics , oceanography , sediment , nuclear physics , biology , geology
The precursor (1,1,1,5,5,5‐hexafluoro‐2,4‐pentanedionato) palladium( II ) [Pd(hfac) 2 ] was used to deposit high‐purity, polycrystalline palladium films under low‐pressure CVD conditions at high growth rates (1000–4000 Å/min) over a substrate temperature range of 80–200°C in the presence of H 2 . Mixing of the precursor and H 2 streams near the substrate was required to avoid reactions of the precursor with H 2 at locations other than the substrate surface. Auger electron spectroscopy (AES) showed that the films were impurity free when sufficient H 2 was used. Resistivity values of 20 μΩ were obtained at the higher deposition temperatures (∼200 °C) while high values of 50 μω were observed at the lower deposition temperatures (∼90 °C). The deposition rate was feed‐rate limited even at the lowest deposition temperatures and highest precursor delivery rates, suggesting that even higher deposition rates could be obtained with higher feed rates. A high precursor conversion of 50–60 % was observed. The high surface reaction probability of Pd(hfac) 2 in the presence of H 2 was reflected qualitatively by trench fill studies which showed a greater film thickness on the top of sub‐micrometer trenches than in the bottom.