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Cross‐Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry
Author(s) -
Perrin J.,
Leroy O.,
Bordage M. C.
Publication year - 1996
Publication title -
contributions to plasma physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0863-1042
DOI - 10.1002/ctpp.2150360102
Subject(s) - ion , silane , atomic physics , molecule , radical , electron , reaction rate constant , plasma , glow discharge , cluster (spacecraft) , materials science , electron ionization , kinetics , chemistry , physics , nuclear physics , organic chemistry , ionization , quantum mechanics , computer science , programming language , composite material
Abstract This paper presents a critical review of the basic data concerning the physics and chemistry of low pressure SiH 4 glow discharges used to deposit hydrogenated amorphous silicon films (a‐Si:H). Starting with an updated table of thermochemical data, we analyze the gas‐phase elementary processes consisting of i) electron‐molecule collisions, ii) ion‐molecule collisions, iii) neutral‐neutral collisions, iv) other electron and ion collisions involving electron‐ion and ion‐ion recombination, electron attachment on radicals and detachment of anions, and v) cluster growth kinetics in dusty plasmas. Experimental data or theoretical estimates are given and discussed in terms of cross‐sections, collision and reaction rate constants, and transport coefficients. We also analyze the surface processes and reaction probabilities of ions, radicals and molecules.