Cross‐Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry

This paper presents a critical review of the basic data concerning the physics and chemistry of low pressure SiH 4 glow discharges used to deposit hydrogenated amorphous silicon films (a‐Si:H). Starting with an updated table of thermochemical data, we analyze the gas‐phase elementary processes consisting of i) electron‐molecule collisions, ii) ion‐molecule collisions, iii) neutral‐neutral collisions, iv) other electron and ion collisions involving electron‐ion and ion‐ion recombination, electron attachment on radicals and detachment of anions, and v) cluster growth kinetics in dusty plasmas. Experimental data or theoretical estimates are given and discussed in terms of cross‐sections, collision and reaction rate constants, and transport coefficients. We also analyze the surface processes and reaction probabilities of ions, radicals and molecules.