Premium
To the Kinetics of Nitrogen Incorporation during dc Magnetron Deposition
Author(s) -
Sobe G.
Publication year - 1994
Publication title -
contributions to plasma physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0863-1042
DOI - 10.1002/ctpp.2150340110
Subject(s) - nitrogen , partial pressure , materials science , sputter deposition , argon , cavity magnetron , deposition (geology) , analytical chemistry (journal) , sputtering , substrate (aquarium) , condensation , kinetics , ionization , ion , chemical engineering , thin film , chemistry , nanotechnology , thermodynamics , oxygen , environmental chemistry , oceanography , physics , organic chemistry , sediment , geology , biology , paleontology , quantum mechanics , engineering
Abstract Investigations of nitrogen incorporation during film deposition by dc magnetron sputtering with a CrSiAl target in Ar/N 2 mixtures have been carried out in the range of the metallic mode. The rate of the nitrogen consumption is proportional to the nitrogen partial pressure during deposition and to the amperage. The corresponding rate constant decreases with the argon pressure. Furthermore, the condensation rate of the target species decreases with the nitrogen partial pressure and is determined by the rate constant of the nitrogen consumption. The experimental results are explained by a 4‐stepped reaction sequence of nitrogen incorporation consisting in (1) ionization, (2) ion bombardment of the target and formation of a coverage by plating, (3) removal of the coverage by the sputter process, (4) condensation on the substrate.