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Influence of the Basic Process Parameters on the Ion/Atom Arrival Rate Ratio during Magnetron Sputter Deposition of Thin Carbon Films
Author(s) -
Petrov I.,
Orlinov V.,
Ivanov I.,
Kourtev J.
Publication year - 1988
Publication title -
contributions to plasma physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0863-1042
DOI - 10.1002/ctpp.2150280309
Subject(s) - sputtering , materials science , sputter deposition , argon , ion , atom (system on chip) , substrate (aquarium) , cavity magnetron , thin film , analytical chemistry (journal) , flux (metallurgy) , atomic physics , chemistry , nanotechnology , physics , metallurgy , oceanography , organic chemistry , chromatography , geology , computer science , embedded system
The behaviour of the ratio of the argon ion flux and the sputtered atom flux to the substrate with the variation of the basic process parameters was studied in a planar magnetron sputtering system. Finding ways to control this ratio is important with respect to carrying out ion‐assisted thin film growth by magnetron sputtering under well‐defined conditions. Combined deposition rate measurements and plasma probe measurements were carried out in order to determine the ion/atom arrival rate ratio. In addition calculations of the neutral atom flux were performed on the basis of a simple model and the results compared with the measured values. A considerable change in the values of the ion/atom arrival rate ratio with the variation of the argon pressure and the discharge power was found under operating conditions, at which the back diffusion of the sputtered material is pronounced. The distribution of the ion flux over the substrate surface was found to become more homogeneous with the increase of the working pressure or the target‐to‐substrate distance.