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Laser‐generated ns plasma pulses characterized using SiC Schottky diode
Author(s) -
Torrisi Lorenzo,
Torrisi Alfio,
Cutroneo Mariapompea
Publication year - 2020
Publication title -
contributions to plasma physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0863-1042
DOI - 10.1002/ctpp.202000012
Subject(s) - plasma , materials science , laser , atomic physics , nanosecond , ion , irradiation , electron , schottky diode , diode , optics , optoelectronics , physics , quantum mechanics , nuclear physics
The nonequilibrium plasma generated by nanosecond laser pulse is characterized using a SiC detector connected in time‐of‐flight configuration to measure the radiations emitted from the plasma. Different metallic targets were irradiated by the pulsed laser at an intensity of 10 10 W/cm 2 and 200 mJ pulse energy. The SiC allows detecting ultraviolet radiations and soft X‐rays, electrons, and ions. The obtained plasma has a temperature of the order of tens to hundreds eV depending on the atomic number of the irradiated target and ion accelerations of the order of 100 eV per charge state.