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Combined in situ infrared reflection absorption spectroscopy–quartz crystal microbalance investigation of the initial growth stages of plasma‐deposited SiO x on polypropylene
Author(s) -
Dietrich J.,
Hoppe C.,
de los Arcos T.,
Grundmeier G.
Publication year - 2018
Publication title -
contributions to plasma physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0863-1042
DOI - 10.1002/ctpp.201700036
Subject(s) - materials science , quartz crystal microbalance , etching (microfabrication) , substrate (aquarium) , infrared spectroscopy , analytical chemistry (journal) , absorption (acoustics) , absorption spectroscopy , thin film , chemical vapor deposition , spectroscopy , deposition (geology) , crystal (programming language) , layer (electronics) , composite material , nanotechnology , optics , adsorption , chemistry , chromatography , organic chemistry , physics , quantum mechanics , computer science , programming language , paleontology , oceanography , sediment , biology , geology
The early growth stages of SiO x deposited onto polypropylene by plasma‐enhanced chemical vapour deposition were investigated by means of quartz crystal microbalance monitoring in combination with in vacuo characterization of the layers by infrared reflection absorption spectroscopy (IRRAS). Additional ex situ characterization of the thin film morphology was done by atomic force microscopy. The combined analysis allowed us to identify three growth stages. Below the film thickness of 4 nm, the growth is dominated by substrate etching, and the volatile etched fragments are incorporated into the SiO x film. Between 4 and 10 nm thickness, deposition dominates over etching, but etching is still possible through open channels through a not fully cross‐linked SiO x matrix. For thickness above 10 nm, etching of the substrate is completely suppressed, and the SiO x film presents the characteristics of a fully cross‐linked structure.