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The Organosilicon thin Film Deposited Using an Atmospheric Pressure Dual‐Frequency 50 kHz/33 MHz Frequency MicroPlasma Jet
Author(s) -
Yuan Q. H.,
Wang X. M.,
Yin G. Q.,
Li J.,
Dong C. Z.
Publication year - 2016
Publication title -
contributions to plasma physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0863-1042
DOI - 10.1002/ctpp.201500066
Subject(s) - organosilicon , materials science , microplasma , x ray photoelectron spectroscopy , analytical chemistry (journal) , fourier transform infrared spectroscopy , spectroscopy , atmospheric pressure , atmospheric pressure plasma , thin film , tetraethyl orthosilicate , jet (fluid) , plasma , optics , chemistry , nuclear magnetic resonance , nanotechnology , organic chemistry , physics , polymer chemistry , quantum mechanics , thermodynamics , meteorology
In this paper, an atmospheric pressure dual‐frequency (50 kHz/33 MHz) micro‐plasma jet was used to deposit organosilicon film. The discharge generated in atmospheric environment. Plasma composition was characterized by optical emission spectroscopy. With introduction of tetraethyl orthosilicate, we observed various spectra, for example Si(251.6 nm), OH(308.9 nm), C(247.8 nm), O(777.5 nm). Abundant reactive radical species which are benefit to film deposition were generated in plasma. The deposited film was characterized by scanning electron microscopy, X‐ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The film is mostly composed of Si and O. The film has Si‐O‐Si backbone with a small number of organic component (‐CHx). (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)