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The Electron Transport Coefficients of Boron and Silicon Plasma
Author(s) -
Apfelbaum E. M.
Publication year - 2013
Publication title -
contributions to plasma physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0863-1042
DOI - 10.1002/ctpp.201200078
Subject(s) - plasma , boron , silicon , thermal conductivity , electron , ionization , materials science , atomic physics , atom (system on chip) , conductivity , atomic mass , electrical resistivity and conductivity , relaxation (psychology) , analytical chemistry (journal) , physics , chemistry , ion , nuclear physics , optoelectronics , composite material , social psychology , psychology , quantum mechanics , computer science , embedded system , chromatography
The conductivity, thermal conductivity and thermal power of Silicon and Boron plasma have been calculated within the relaxation time approximation. The plasma composition has been obtained by means of correspond‐ing system of coupled mass action laws. We have considered the atom ionization up to +4. The results of our simulations are in good agreement with recent measurement data at T ≥ 10 kK. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)