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Hopping Transport and Stochastic Dynamics of Electrons in Plasma Layers
Author(s) -
Chetverikov A. P.,
Ebeling W.,
Röpke G.,
Velarde M.G.
Publication year - 2011
Publication title -
contributions to plasma physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0863-1042
DOI - 10.1002/ctpp.201000115
Subject(s) - physics , electron , pauli exclusion principle , quantum , statistical physics , atom (system on chip) , dynamic structure factor , nonlinear system , relaxation (psychology) , quantum mechanics , condensed matter physics , psychology , social psychology , inelastic neutron scattering , inelastic scattering , computer science , scattering , embedded system
We investigate the stochastic dynamics and the hopping transfer of electrons embedded into two‐dimensional atomic layers. First we formulate the quantum statistics of general atom ‐ electron systems based on the tight‐binding approximation and express ‐ following linear response transport theory ‐ the quantum‐mechanical time correlation functions and the conductivity by means of equilibrium time correlation functions. Within the relaxation time approach an expression for the effective collision frequency is derived in Born approximation, which takes into account quantum effects and dynamic effects of the atom motion through the dynamic structure factor of the lattice and the quantum dynamics of the electrons. In the last part we derive Pauli equations for the stochastic electron dynamics including nonlinear excitations of the atomic subsystem. We carry out Monte Carlo simulations and show that mean square displacements of electrons and transport properties are in a moderate to high temperature regime strongly influenced by by soliton‐type excitations and demonstrate the existence of percolation effects (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)