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Time‐Resolved Diagnostics of Dual High Power Impulse Magnetron Sputtering With Pulse Delays of 15 µs and 500 µs
Author(s) -
Stranak V.,
Drache S.,
Cada M.,
Hubicka Z.,
Tichy M.,
Hippler R.
Publication year - 2011
Publication title -
contributions to plasma physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0863-1042
DOI - 10.1002/ctpp.201000065
Subject(s) - high power impulse magnetron sputtering , materials science , duty cycle , anode , impulse (physics) , cathode , plasma , sputter deposition , cavity magnetron , ion , pulsed power , optoelectronics , atomic physics , sputtering , voltage , optics , physics , electrical engineering , electrode , nanotechnology , thin film , engineering , quantum mechanics
Time‐resolved measurements have been performed during dual High Power Impulse Magnetron Sputtering (dual‐HiPIMS) with two cathodes in a closed magnetic field configuration. The effect of a delay between subsequent pulses on electron density, mean electron energy, and ion flux to the substrate was investigated by time‐resolved diagnostic methods. Two different delays of 15 µs and 500 µs between subsequent pulses were investigated. The dual‐HiPIMS system, operated at a repetition frequency f = 100 Hz and duty cycle of 1 %, was equipped with different metallic targets (Ti, Cu). It is shown that a delay between subsequent pulses influences the plasma parameters and can be used to control deposition processes. It was noted that target surfaces (alternately serving as a cathode/anode) are contaminated by sputtered material from the previous pulse which influences the time‐evolution of the discharge parameters (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)