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RF Capillary Jet ‐ a Tool for Localized Surface Treatment
Author(s) -
Foest R.,
Kindel E.,
Lange H.,
Ohl A.,
Stieber M.,
Weltmann K.D.
Publication year - 2007
Publication title -
contributions to plasma physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0863-1042
DOI - 10.1002/ctpp.200710017
Subject(s) - materials science , plasma , capillary action , substrate (aquarium) , jet (fluid) , analytical chemistry (journal) , radiance , thin film , thermal , atomic physics , optics , chemistry , nanotechnology , physics , composite material , thermodynamics , oceanography , chromatography , geology , quantum mechanics
Abstract The UV/VUV spectrum of a non‐thermal capillary plasma jet operating with Ar at ambient atmosphere and the temperature load of a substrate exposed to the jet have been measured. The VUV radiation is assigned to N, H, and O atomic lines along with an Ar * 2 excimer continuum. The absolute radiance (115‐200 nm) of the source has been determined. Maximum values of 880 μW/mm 2 sr are obtained. Substrate temperatures range between 35 °C for low powers and high gas flow conditions and 95 °C for high powers and reduced gas flow. The plasma source (13.56, 27.12 or 40.78 MHz) can be operated in Ar and in N 2 . The further addition of a low percentage of silicon containing reactive admixtures has been demonstrated for thin film deposition. Several further applications related to surface modification have been successfully applied. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)