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Deposition and Etching of Thin Films by Means of Beam Plasma Discharge with Tube‐Like Electron Beam
Author(s) -
Atamanov V. M.,
Levadny G. B.,
Ivanov A. A.,
Klagge S.,
Maass M.,
Nasedkin Y. F.,
Sereda U. V.,
Serov A. A.,
Timchenko N. N.
Publication year - 1982
Publication title -
beiträge aus der plasmaphysik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.531
H-Index - 47
eISSN - 1521-3986
pISSN - 0005-8025
DOI - 10.1002/ctpp.19820220505
Subject(s) - etching (microfabrication) , plasma , langmuir probe , plasma etching , materials science , tungsten , reactive ion etching , deposition (geology) , atomic physics , plasma processing , thin film , auger electron spectroscopy , analytical chemistry (journal) , amorphous solid , chemistry , plasma diagnostics , layer (electronics) , nanotechnology , metallurgy , organic chemistry , quantum mechanics , paleontology , physics , chromatography , sediment , nuclear physics , biology
The efficiency of energy dissipation caused by the mechanism of turbulent plasma heating from a tube‐like electron beam in a electronegative gas is measured calorimetrically. Amorphous Si‐layers are deposited from a SiH 4 /Ar discharge both on conducting and nonconducting substrates and are analyzed by means of Auger‐spectrometry. The velocity and specific energy of etching of SiO 2 ‐layers in a CF 4 ‐plasma are determined. Measured etching velocities of tungsten surfaces biased differently against the space potential provide information on the mechanism of plasma etching in a SF 6 ‐plasma. Simultaneously performed Langmuir‐probe measurements permit predictions to be made on the properties of the etching plasma.