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A sub‐1V supply CMOS voltage reference generator
Author(s) -
Tsitouras A.,
Plessas F.,
Birbas M.,
Kikidis J.,
Kalivas G.
Publication year - 2012
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.753
Subject(s) - bandgap voltage reference , voltage reference , voltage , electrical engineering , power supply rejection ratio , generator (circuit theory) , common emitter , cmos , operational amplifier , temperature coefficient , voltage divider , materials science , amplifier , engineering , physics , dropout voltage , power (physics) , quantum mechanics
SUMMARY An integrated sub‐1V voltage reference generator, designed in standard 90‐nm CMOS technology, is presented in this paper. The proposed voltage reference circuit consists of a conventional bandgap core based on the use of p‐n‐p substrate vertical bipolar devices and a voltage‐to‐current converter. The former produces a current with a positive temperature coefficient (TC), whereas the latter translates the emitter‐base voltage of the core p‐n‐p bipolar device to a current with a negative TC. The circuit includes two operational amplifiers with a rail‐to‐rail output stage for enabling stable and robust operation overall process and supply voltage variations while it employs a total resistance of less than 600 K Ω. Detailed analysis is presented to demonstrate that the proposed circuit technique enables die area reduction. The presented voltage reference generator exhibits a PSRR of 52.78 dB and a TC of 23.66ppm/ ∘ C in the range of − 40 and 125 ∘ C at the typical corner case at 1 V. The output reference voltage of 510 mV achieves a total absolute variation of ± 3.3% overall process and supply voltage variations and a total standard deviation, σ, of 4.5 mV, respectively, in the temperature range of − 36 and 125 ∘ C. Copyright © 2011 John Wiley & Sons, Ltd.