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High‐speed non‐linear circuit models for p‐n junction diodes
Author(s) -
Chua Leon O.,
Chang ChwenCher
Publication year - 1988
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.4490160205
Subject(s) - diode , transient (computer programming) , diffusion , equivalent circuit , base (topology) , electronic circuit , computer science , transient response , electronic engineering , topology (electrical circuits) , control theory (sociology) , physics , electrical engineering , engineering , mathematics , voltage , mathematical analysis , control (management) , artificial intelligence , thermodynamics , operating system
Circuit models for both long‐base and short‐base p‐n junction diodes which are valid for non‐linear high‐speed and high‐frequency operations are presented. the diode model consists of a parallel connection of higher‐order dynamic elements and includes the conventional diffusion model as a special case. the new dynamic model can be used for simulating arbitrary p‐n junction diode circuits under all operating conditions. In particular, it is capable of simulating realistically the diode's reverse transient behaviour and providing an increasingly accurate approximation to the diffusion equation as the order of the model gets higher. the model is also shown to be capable of reproducing the frequency‐dependent small‐signal characteristics of p‐n junction diodes. The model is based mainly upon the device's physical operating principles. Perhaps the most significant implication of the model is the fact that it illustrates the important roles played by higher‐order and dynamic elements in highspeed and high‐frequency non‐linear device modelling.