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A simple dynamic circuit model for mos structure
Author(s) -
Chua Leon O.,
Chang ChwenCher
Publication year - 1987
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.4490150205
Subject(s) - simple (philosophy) , capacitor , equivalent circuit , electrical element , computer science , electronic circuit , electronic engineering , component (thermodynamics) , small signal model , topology (electrical circuits) , control theory (sociology) , engineering , electrical engineering , voltage , physics , philosophy , control (management) , epistemology , artificial intelligence , thermodynamics
Abstract A new simple circuit model for the MOS (metal‐oxide‐semiconductor) structure is presented. the model consists of three elements, namely, a linear capacitor, a non‐linear capacitor and a C‐dynamic element. Each component bears a simple relationship to the physical operating mechanism inside the MOS structure. the model can be used for simulating arbitrary MOS structure circuits under all operating conditions. In particular, it is capable of reproducing the structure's frequency‐dependent small‐signal characteristics. the model is also shown to exhibit many important and interesting dynamic behaviours under forward, reverse and sinusoidal operating modes. The model is based mainly upon the device's physical operating principles. But perhaps the most significant implication of this model is that it is the first ever to use a dynamic element to model the MOS structure from a physical approach.