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A lumped‐distributed small‐signal model for a class of transit‐time semiconductor devices
Author(s) -
Quang Nguyen
Publication year - 1976
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.4490040404
Subject(s) - diode , semiconductor device , distributed element model , signal (programming language) , noise (video) , semiconductor , electrical engineering , electronic engineering , transmission (telecommunications) , pin diode , electric power transmission , diffusion , equivalent circuit , physics , computer science , engineering , materials science , voltage , image (mathematics) , layer (electronics) , artificial intelligence , composite material , thermodynamics , programming language
In this paper a new lumped‐distributed small‐signal and noise model is presented for a class of transit‐time semiconductor devices including the IMPATT, BARITT, Transferred Electron and Space Charge Limited (SCL) diodes. The assumption of uniform carrier velocity is made and diffusion is neglected. The diode‐model is composed of lumped elements and dispersionless transmission lines, hence it is very suitable for computer‐aided circuit analysis. Broad agreement has been found between the experimental behaviour of devices and that of their models.