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A memristive circuit model for p‐n junction diodes
Author(s) -
Chua Leon O.,
Tseng ChongWei
Publication year - 1974
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.4490020406
Subject(s) - diode , electrical impedance , capacitor , memristor , nonlinear system , capacitive sensing , dc bias , equivalent circuit , electronic engineering , control theory (sociology) , computer science , materials science , physics , electrical engineering , optoelectronics , engineering , voltage , quantum mechanics , control (management) , artificial intelligence
A new simple lumped circuit model for junction diodes is presented. The model contains only 4 elements; namely, 2 controlled current sources , a nonlinear capacitor , and a memristor . Each component bears a simple relationship with the physical operating mechanisms inside the diode. The model is shown capable of simulating realistically the diode's dynamic behaviours under reverse, forward, and sinusoidal operating modes. Both the storage time and the fall time of the diode can be accurately predicted. The model is also shown capable of mimicking various second order effects due to conductivity modulation. In particular, the model is shown to exhibit a predominantly capacitive incremental impedance under small forward bias and a predominantly inductive impedance under large forward bias. Moreover, it includes the standard two‐capacitor model as a special case.