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A low‐power native NMOS‐based bandgap reference operating from − 55°C to 125°C with Li‐Ion battery compatibility
Author(s) -
Caselli Michele,
Liempd Chris,
Boni Andrea,
Stanzione Stefano
Publication year - 2021
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.2986
Subject(s) - bandgap voltage reference , nmos logic , cmos , electrical engineering , temperature coefficient , mosfet , voltage reference , voltage , transistor , materials science , battery (electricity) , low voltage , silicon bandgap temperature sensor , computer science , electronic engineering , optoelectronics , engineering , power (physics) , physics , dropout voltage , quantum mechanics
Summary The paper describes the implementation of a bandgap reference based on native‐MOSFET transistors for low‐power sensor node applications. The circuit can operate from − 55°C to 125°C and with a supply voltage ranging from 1.5 to 4.2 V. Therefore, it is compatible with the temperature range of automotive and military‐aerospace applications, and for direct Li‐Ion battery attach. Moreover, the circuit can operate without any dedicated start‐up circuit, thanks to its inherent single operating point. A mathematical model of the reference circuit is presented, allowing simple portability across technology nodes, with current consumption and silicon area as design parameters. Implemented in a 55‐nm CMOS technology, the voltage reference achieves a measured average (maximum) temperature coefficient of 28 ppm/°C (43 ppm/°C) and a measured sample‐to‐sample variation within 57 mV, with a current consumption of 420 nA at 27°C.