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360‐μW 4.1‐dB NF CMOS MedRadio receiver RF front‐end with current‐reuse Q ‐boosted resistive feedback LNA for biomedical IoT applications
Author(s) -
Kim Taejong,
Im Donggu,
Kwon Kuduck
Publication year - 2020
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.2772
Subject(s) - cmos , electrical engineering , noise figure , low noise amplifier , pmos logic , rf front end , flicker noise , transistor , electronic engineering , amplifier , engineering , radio frequency , voltage , optoelectronics , materials science
Summary In this paper, a low‐power low‐noise complementary metal‐oxide semiconductor (CMOS) receiver RF front‐end (RFFE) that employs a current‐reuse Q ‐boosted resistive feedback low‐noise amplifier (RFLNA) is proposed for 401 to 406 MHz medical device radio‐communication service band IoT applications. By employing a series RLC input matching network, the proposed RFLNA has the advantages of both the conventional RFLNA and the inductively degenerated common‐source LNA without using large on‐chip spiral inductors at the sources of the main transistors. The proposed active mixer utilizes a current‐reuse transconductor, in which a p‐channel metal‐oxide semiconductor (PMOS) transistor performs a current‐bleeding function to reduce direct current (DC) and flicker noise in the switching stage of the active mixer. The proposed receiver RFFE is implemented in a 65‐nm CMOS process and achieves a voltage gain of 30.9 dB, noise figure of 4.1 dB, S11 of less than −10 dB, and IIP3 of −22.9 dBm. It operates at a supply voltage of 1 V with bias currents of 360 μA. The active die area is 0.4 mm × 0.35 mm.