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Characterizing BJTs using the Early voltage in the forward active mode
Author(s) -
Costa Luciano da F.,
Silva Filipi Nascimento,
Comin Cesar H.
Publication year - 2018
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.2450
Subject(s) - bipolar junction transistor , common emitter , electronics , voltage , transistor , computer science , electronic engineering , electrical engineering , engineering
Summary Bipolar junction transistors (BJTs) have been at the core of linear electronics from its beginnings. Here, we suggest an Early‐based inspired geometric model of BJT devices and its application to derive models of related electronic circuits (more specifically a common‐emitter configuration). The approach involves using a beam of isolines converging at the Early voltage as the model of a BJT. The angles of the isolines are experimentally verified often to vary almost linearly with the base current. A numerical methodology is suggested for the Early voltage estimation and applied to 12 real‐world small signal NPN BJTs. Interesting results are obtained, including the identification of diverse Early voltage values for different BJT types and estimation of transfer functions.