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Exploring resistive switching‐based memristors in the charge–flux domain: A modeling approach
Author(s) -
Al Chawa M. Moner,
Picos Rodrigo,
Roldan Juan B.,
JimenezMolinos Francisco,
Villena Marco Antonio,
de Benito Carol
Publication year - 2018
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.2397
Subject(s) - reset (finance) , memristor , electrical conductor , protein filament , resistive random access memory , flux (metallurgy) , thermal conduction , resistive touchscreen , voltage , charge (physics) , radius , mechanics , computer science , electronic engineering , physics , materials science , electrical engineering , engineering , thermodynamics , computer security , financial economics , economics , composite material , metallurgy , quantum mechanics
Summary We analyzed resistive switching‐based memristors by using the charge–flux relations instead of the traditional current–voltage approach. We employed simulated and experimental data to develop a model that can be easily included in circuit simulators. Physical simulations of devices with different conductive filament sizes were employed to fit the 3‐parameter model introduced. Later on, the relations between the model parameters and the conductive filament geometrical features were characterized in‐depth. In addition, a model to obtain the energy employed in the reset process was presented. Finally, we used the model to estimate the experimental conductive filament radius distribution using a set of 3000 reset cycles. Copyright © 2017 John Wiley & Sons, Ltd.