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67‐90 GHz broadband power detector with 3 GHz output bandwidth for on‐chip test of millimeter‐wave circuits
Author(s) -
del Rio David,
Gurutzeaga Iñaki,
Rezola Ainhoa,
Velez Igone,
Berenguer Roc
Publication year - 2018
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.2396
Subject(s) - extremely high frequency , broadband , bandwidth (computing) , amplifier , detector , bicmos , electrical engineering , chip , electronic engineering , pmos logic , electronic circuit , engineering , physics , voltage , transistor , telecommunications
Summary This paper presents the design of a compact and wide bandwidth millimeter‐wave power detector, integrated at the output of an E‐band power amplifier and implemented in a 55‐nm SiGe BiCMOS process. It is based on a nonlinear PMOS detector core, and its measured output voltage tracks the output power of the PA from 67 to 90 GHz. It provides an insertion loss lower than 0.2 dB, and its responsivity can be tuned between 8 and 17 V/W. The output bandwidth is bigger than 3 GHz, which allows built‐in self‐test when transmitting multigigabit millimeter‐wave signals.