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Variation‐aware widely tunable nanoscale design of CMOS active inductor‐based RF bandpass filter
Author(s) -
Mehra Rishab,
Kumar Vikash,
Islam Aminul,
Kaushik Brajesh Kumar
Publication year - 2017
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.2364
Subject(s) - inductor , cmos , active filter , electronic engineering , band pass filter , noise figure , bandwidth (computing) , capacitor , voltage controlled filter , electrical engineering , amplifier , transconductance , operational transconductance amplifier , high pass filter , computer science , filter (signal processing) , engineering , voltage , low pass filter , transistor , operational amplifier , telecommunications
Summary This paper presents a novel design methodology for realizing a variation‐aware widely tunable active inductor‐based RF bandpass filter (BPF). The inductor‐less filter is designed and implemented using voltage differencing transconductance amplifier (VDTA) as an active building block and a grounded capacitor, thereby validating its suitability for fully integrated circuit applications. Digital ‘coarse’ tuning and analog ‘fine’ tuning are employed to achieve better frequency coverage. The designed filter exhibits a tuning range of 1.65–3.015 GHz and a 3‐dB bandwidth of 1400–122 MHz which translates into a quality factor of 1.17–24.71. It offers a voltage gain of 0–22.91 dB, noise figure of 28.16–28.95 dB, has a 1‐dB compression point of 2.50–2.478 dBm and draws 0.065–0.232 mW power from 1‐V power supply. Our proposed design shows a figure‐of‐merit of 82.08–91.27 dB, which is higher as compared to its counterparts available in the literature. The filter is implemented in 45‐nm CMOS technology node using metal gate and strained silicon. Copyright © 2017 John Wiley & Sons, Ltd.