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Threshold voltage extraction techniques adaptable from sub‐micron CMOS to large‐area oxide TFT technologies
Author(s) -
Samanta Smrutilekha,
Tiwari Bhawna,
Bahubalindruni Pydi Ganga,
Barquinha Pedro,
Goes Joao
Publication year - 2017
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.2340
Subject(s) - transistor , thin film transistor , cmos , materials science , optoelectronics , diode , inverter , semiconductor , electronic engineering , ranging , electrical engineering , voltage , computer science , nanotechnology , engineering , layer (electronics) , telecommunications
Summary This paper proposed simple and accurate threshold voltage ( V TH ) extraction techniques, which can be directly adaptable to various semiconductor technologies ranging from deep sub‐micron complementary metal–oxide–semiconductor to large‐area thin‐film transistor devices. These techniques are developed using multiple circuits, namely, a dynamic source follower, an inverter with a diode‐connected load and a current mirror topology, which allow a direct determination of V TH . As the proposed techniques are experimented with large‐area emerging technologies, which have a stable single type (n‐type) transistor, all the designs employed in this work are confined to only n‐type transistors for a fair comparison. The semiconductor technologies under consideration are standard complementary metal–oxide–semiconductor (65 and 130 nm) and oxide (indium–gallium–zinc–oxide and zinc–tin–oxide) thin‐film transistors. In order to validate the accuracy of the proposed techniques, extracted V TH from these methods are compared against the value from linear transfer characteristics. The resulting relative error is within 5%, reinforcing proposed techniques suitability to different semiconductor technologies ranging from deep sub‐micron to large‐area transistors. Copyright © 2017 John Wiley & Sons, Ltd.