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A front‐end receiver with a dual cross‐coupling technique for MICS applications
Author(s) -
Gong CihunSiyong Alex,
Chang ChiaHung,
Shiu FengLin,
Chiou HwannKaeo,
Hwang YihShiou
Publication year - 2017
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.2239
Subject(s) - electrical engineering , noise figure , transconductance , radio receiver design , amplifier , local oscillator , intermediate frequency , low noise amplifier , radio frequency , cmos , electronic engineering , transmitter , physics , topology (electrical circuits) , engineering , channel (broadcasting) , transistor , voltage
Summary This paper presents a front‐end receiver with a dual cross‐couple technique for Medical Implant Communication Services M applications, using a standard complementary metal‐oxide semiconductor process. A lower‐power design is achieved using a resistive feedback, g m ‐boosting technique along with a current reuse topology in the receiver's transconductance stage. In addition, a dual cross‐coupling configuration applied at the input stage increases overall gain performance and reduces power consumption. The measured power dissipation of the low‐noise amplifier is only 0.51 mW. The conversion gain of the receiver is 19.74 dB, while the radio frequency and local oscillator frequencies are respectively 403.5 and 393.5 MHz, and the LO power is 0 dBm. The chip exhibits excellent isolation below −70 dB from LO to intermediate frequency and LO to radio frequency. Copyright © 2016 John Wiley & Sons, Ltd.